EN71NS128B0
Stacked Multi-Chip Product (MCP) Flash Memory and RAM
128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous
Operation Burst Mode Flash Memory and
32 Megabit (2M x 16-bit) Pseudo Static RAM
EN71NS128B0 Base MCP
Distinctive Characteristics
MCP Features
Power supply voltage of 1.7V to 1.95V
High performance
- 70 ns @ random access
- 7 ns @ burst access (108MHz)
Operating Temperature
- 25°C to +85°C
Package
- 8 x 9.2mm 56 ball FBGA
General Description
The EN71NS series is a product line of stacked Multi-Chip Product (MCP) packages and consists of:
E29NS128 (Burst mode) Flash memory die.
Pseudo SRAM.
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For detailed specifications, Please refer to the individual datasheets listed in the following table.
Device
NOR Flash
Pseudo SRAM
Document
EN29NS128
ENPSS32
Product Selector Guide
128 Mb Flash Memories
Device-Model#
Flash Access time
EN71NS128B0
70ns at Async. Mode
7ns at Burst Read
pSRAM density
pSRAM Access time
pSRAM Burst mode
max frequency
32M pSRAM
70ns at Async. Mode
7ns at Burst Read
108MHz
pSRAM Burst mode
108MHz
max frequency
Package
56-ball FBGA
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. A, Issue Date: 2009/7/24
EON [ EON SILICON SOLUTION INC. ]
