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EM421M1684LBA-7FE 参数 Datasheet PDF下载

EM421M1684LBA-7FE图片预览
型号: EM421M1684LBA-7FE
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB ( 8M × 4Bank × 16 ),双倍数据速率SDRAM [512Mb (8M】4Bank】16) Double DATA RATE SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 20 页 / 962 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex
Features
• Internal Double-Date-Rate architecture with 2
Accesses per clock cycle.
• 1.8V
±0.1V
VDD/VDDQ
• 1.8V LV-COMS compatible I/O
• Burst Length (B/L) of 2, 4, 8, 16
• 3 Clock read latency (CL3)
• Bi-directional,intermittent data strobe(DQS)
• All inputs except data and DM are sampled
at the positive edge of the system clock.
• Data Mask (DM) for write data
• Sequential & Interleaved Burst type available
• Auto Precharge option for each burst accesses
• DQS edge-aligned with data for Read cycles
• DQS center-aligned with data for Write cycles
• No DLL;CK to DQS is not synchronized
• Deep power down mode
• Partial Array Self-Refresh(PASR)
• Auto Temperature Compensated Self-Refresh
(TCSR) by built-in temperature sensor
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms
EM42BM1684LBA
512Mb (8M
×
4Bank
×
16)
Double DATA RATE SDRAM
Description
The EM42BM1684LBA is high speed Synchronous
graphic RAM fabricated with ultra high performance
CMOS process containing 536,870,912 bits which
organized as 8Meg words x 4 banks by 16 bits.
The 512Mb DDR SDRAM uses a double data rate
architecture to accomplish high-speed operation.
The data path internally prefetches multiple bits and
It transfers the datafor both rising and falling edges
of the system clock.It means the doubled data
bandwidth can be achieved at the I/O pins.
Available packages:FBGA-60B(12mmx10mm).
Ordering Information
Part No
EM42BM1684LBA-75F
EM42BM1684LBA-75FE
Organization
32M X 16
32M X 16
Max. Freq
133MHz/DDR266 @CL3
133MHz/DDR266 @CL3
Package
BGA-60B
BGA-60B
Grade
Commercial.
Extend Temp.
Pb
Free
Free
* EOREX reserves the right to change products or specification without notice.
Jul. 2006
1/20
www.eorex.com