eorex
EM42AM3284LBC
512Mb (4M×4Bank×32)
Double DATA RATE SDRAM
Features
Description
• Internal Double-Date-Rate architecture with 2
Accesses per clock cycle.
• 1.8V ±0.1V VDD/VDDQ
• 1.8V LV-COMS compatible I/O
• Burst Length (B/L) of 2, 4, 8, 16
The EM42AM3284LBC is high speed Synchronous
graphic RAM fabricated with ultra high performance
CMOS process containing 536,870,912 bits which
organized as 4Meg words x 4 banks by 32 bits.
The 512Mb DDR SDRAM uses a double data rate
architecture to accomplish high-speed operation.
The data path internally prefetches multiple bits and
It transfers the datafor both rising and falling edges
of the system clock.It means the doubled data
bandwidth can be achieved at the I/O pins.
• 3 Clock read latency
• Bi-directional,intermittent data strobe(DQS)
• All inputs except data and DM are sampled
at the positive edge of the system clock.
• Data Mask (DM) for write data
• Sequential & Interleaved Burst type available
• Auto Precharge option for each burst accesses
• DQS edge-aligned with data for Read cycles
• DQS center-aligned with data for Write cycles
• No DLL;CK to DQS is not synchronized
• Deep power down mode
Available packages:TFBGA-90B(13mmx10mm).
• Partial Array Self-Refresh(PASR)
• Auto Temperature Compensated Self-Refresh
(TCSR) by built-in temperature sensor
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms
Ordering Information
Part No
Organization
Max. Freq
Package
Grade
Pb
EM42AM3284LBC-75F
16M X 32
133MHz/DDR266 @CL3 TFBGA-90B Commercial Free
166MHz/DDR333 @CL3 TFBGA-90B Commercial Free
133MHz/DDR266 @CL3 TFBGA-90B Extend temp. Free
166MHz/DDR333 @CL3 TFBGA-90B Extend temp. Free
EM42AM3284LBC-6F
EM42AM3284LBC-75FE
EM42AM3284LBC-6FE
16M X 32
16M X 32
16M X 32
Jun. 2009
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