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EM44DM0888LBA 参数 Datasheet PDF下载

EM44DM0888LBA图片预览
型号: EM44DM0888LBA
PDF下载: 下载PDF文件 查看货源
内容描述: JEDEC标准VDD / VDDQ [JEDEC Standard VDD/VDDQ]
分类和应用:
文件页数/大小: 29 页 / 556 K
品牌: EOREX [ EOREX CORPORATION ]
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EM44DM0888LBA
Pin Description (Simplified)
Pin
Name
Function
(System Clock)
E8,F8
CK,/CK
CK and CK are differential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK and
negative edge of CK. Output (read) data is referenced to the crossings
of CK and CK (both directions of crossing).
(Chip Select)
G8
/CS
All commands are masked when CS is registered HIGH. CS provides
for external Rank selection on systems with multiple Ranks. CS is
considered part of the command code.
(Clock Enable)
F2
CKE
CKE high activates and CKE low deactivates internal clock signals and
device input buffers and output drivers. Taking CKE low provides
Precharge Power-Down and Self- Refresh operation (all banks idle), or
Active Power-Down (row Active in any bank). CKE is synchronous for
power down entry and exit and for Self-Refresh entry. CKE is
asynchronous for Self-Refresh exit. CKE must be maintained high
throughout read and write accesses. Input buffers, excluding CK, /CK,
ODT and CKE are disabled during Power Down. Input buffers,
excluding CKE are disabled during Self-Refresh.
(Address)
H8,H3,H7,J2,
J8,J3,J7,K2,
K8,K3,H2,K7,
L2,L8
A0~A13
Provided the row address (RA0 – RA13) for Active commands and the
column address (CA0-CA9) and Auto Precharge bit for Read/Write
commands to select one location out of the memory array in the
respective bank. A10 is sampled during a Precharge command to
determine whether the Precharge applies to one bank (A10 LOW) or
all banks (A10 HIGH). If only one bank is to be precharged, the bank is
selected by BA0, BA1 & BA2. The address inputs also provide the
op-code during Mode Register Set commands.
(Bank Address)
G2,G3,G1
BA0, BA1,BA2
BA0 – BA2 define to which bank an Active, Read, Write or Precharge
command is being applied. Bank address also determines if the mode
register or extended mode register is to be accessed during a MRS or
EMRS cycle.
(On Die Termination)
F9
ODT
ODT (registered HIGH) enables termination resistance internal to the
DDR2 SDRAM. When enabled, ODT is applied to each DQ,
UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal. The ODT pin will
be ignored if the Extended Mode Register (EMRS(1)) is programmed
to disable ODT.
(Command Inputs)
F7, G7, F3
/RAS,/CAS,/WE
/RAS, /CAS and /WE (along with /CS) define the command being
entered.
Feb. 2012
5/29
www.eorex.com