欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM48BM1644LBB-75FE 参数 Datasheet PDF下载

EM48BM1644LBB-75FE图片预览
型号: EM48BM1644LBB-75FE
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB ( 4M 】 4Bank 】 16 )同步DRAM [256Mb (4M】4Bank】16) Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 19 页 / 1099 K
品牌: EOREX [ EOREX CORPORATION ]
 浏览型号EM48BM1644LBB-75FE的Datasheet PDF文件第9页浏览型号EM48BM1644LBB-75FE的Datasheet PDF文件第10页浏览型号EM48BM1644LBB-75FE的Datasheet PDF文件第11页浏览型号EM48BM1644LBB-75FE的Datasheet PDF文件第12页浏览型号EM48BM1644LBB-75FE的Datasheet PDF文件第14页浏览型号EM48BM1644LBB-75FE的Datasheet PDF文件第15页浏览型号EM48BM1644LBB-75FE的Datasheet PDF文件第16页浏览型号EM48BM1644LBB-75FE的Datasheet PDF文件第17页  
eorex
Output Drive Strength
Preliminary
EM48AM1644LBB
The normal drive strength got all outputs is specified to be LV-CMOS. By setting EMRS specific parameter
on A6 and A5, driving capability of data output drivers is selected.
Partial Array Self Refresh
In EMRS setting ,memory array size to be refreshed during self-refresh operation is programmable in order
to reduce power. Data outside the defined area will not be retained during self-refresh.
1. Command Truth Table
Command
Ignore Command
No Operation
Burst Stop
Read
Read with Auto Pre-charge
Write
Write with Auto Pre-charge
Bank Activate
Pre-charge Select Bank
Pre-charge All Banks
Symbol
DESL
NOP
BSTH
READ
READA
WRIT
WRITA
ACT
PRE
PALL
CKE
n-1 n
H X
H
H
H
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
/CS
H
L
L
L
L
L
L
L
L
L
/RAS
X
H
H
H
H
H
L
L
L
L
/CAS
X
H
H
L
L
L
H
H
H
H
/WE
X
H
L
H
H
L
H
H
L
L
BA0,
BA1
X
X
X
V
V
V
V
V
V
X
A10
X
X
X
L
H
L
H
V
L
H
L
A11,
A9~A10
X
X
X
V
V
V
V
V
X
X
V
Mode Register Set
MRS
H X
L
L
L
L
L
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input
Jul. 2006
13/19
www.eorex.com