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EM484M1644VTC-6F 参数 Datasheet PDF下载

EM484M1644VTC-6F图片预览
型号: EM484M1644VTC-6F
PDF下载: 下载PDF文件 查看货源
内容描述: 64MB ( 1M 】 4Bank 】 16 )同步DRAM [64Mb (1M】4Bank】16) Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 18 页 / 1066 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex
EM484M1644VTC
Note 5.2:
AC characteristics assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., following compensation should be added to the parameter.
For example:
t
IS :
tr/2 (CLK rising edge )+ t
T
/2(tf for /cas/ras/we..start edge; tr or tf for address/data pin)-1ns
t
IH :
tr/2 (CLK rising edge )+ t
T
/2(tr for /cas/ras/we..end edge; tr or tf for address/data pin)-1ns
Note 5.3:
t
HZ
defines the time at which the output achieve the open circuit condition and is not referenced
to output voltage levels.
AC Operating Test Characteristics (Continued)
(V
DD
=3.3V±0.3V, T
A
=0°C ~70°C/T
A
=-25°C ~ +85°C for extended grade)
Symbol
t
RC
t
RAS
t
RP
t
RCD
t
RRD
t
CCD
t
DPL
t
BDL
t
ROH
t
REF
Parameter
ACTIVE to ACTIVE Command
(Note 6)
Period
ACTIVE to PRECHARGE
(Note 6)
Command Period
PRECHARGE to ACTIVE
(Note 6)
Command Period
ACTIVE to READ/WRITE Delay
(Note 6)
Time
ACTIVE(one) to ACTIVE(another)
(Note 6)
Command
READ/WRITE Command to
READ/WRITE Command
Date-in to PRECHARGE
Command
Date-in to BURST Stop Command
Data-out to High
CL=3
Impedance from
CL=2
PRECHARGE Command
Refresh Time (4,096 cycle)
-6
Min.
60
40
18
18
12
1
2
1
3
100k
Max.
Min.
62
42
18
18
14
1
2
1
3
2
64
64
100k
-7
Max.
Units
ns
ns
ns
ns
ns
CLK
CLK
CLK
CLK
ms
* All voltages referenced to V
SS
.
Note 6:
These parameters account for the number of clock cycles and depend on the operating frequency
of the clock, as follows:
The number of clock cycles = Specified value of timing/clock period (Count Fractions as a whole
number)
Dec. 2007
8/18
www.eorex.com