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EM48BM1644VTC-7FE 参数 Datasheet PDF下载

EM48BM1644VTC-7FE图片预览
型号: EM48BM1644VTC-7FE
PDF下载: 下载PDF文件 查看货源
内容描述: 64MB ( 1M 】 4Bank 】 16 )同步DRAM [64Mb (1M】4Bank】16) Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 18 页 / 1066 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex
Features
• Fully Synchronous to Positive Clock Edge
• Single 3.3V
±0.3V
Power Supply
• LVTTL Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8
or Full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page)
– Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are Sampled at the Rising Edge of
the System Clock
• Auto Refresh and Self Refresh
• 4,096 Refresh Cycles / 64ms (15.625us)
EM484M1644VTC
64Mb (1M
×
4Bank
×
16) Synchronous DRAM
Description
The EM484M1644VTC is Synchronous Dynamic
Random Access Memory (SDRAM) organized as
1Meg words x 4 banks by 16 bits. All inputs and
outputs are synchronized with the positive edge of
the clock.
The 64Mb SDRAM uses synchronized pipelined
architecture to achieve high speed data transfer
rates and is designed to operate at 3.3V low power
memory system. It also provides auto refresh with
power saving / down mode. All inputs and outputs
voltage levels are compatible with LVTTL.
Available packages:TSOPII 54P 400mil.
Ordering Information
Part No
EM484M1644VTC-7F
EM484M1644VTC-6F
EM484M1644VTC-7FE
EM484M1644VTC-6FE
Organization
4M X 16
4M X 16
4M X 16
4M X 16
Max. Freq
143MHz @CL3
166MHz @CL3
143MHz @CL3
166MHz @CL3
Package
54pin TSOP(ll)
54pin TSOP(ll)
54pin TSOP(ll)
54pin TSOP(ll)
Grade
Commercial
Commercial
Extended
Extended
Pb
Free
Free
Free
Free
* EOREX reserves the right to change products or specification without notice.
Dec. 2007
1/18
www.eorex.com