He
epc134/epc135/epc136/epc137/epc138/epc139
Recommended Operating Conditions
Min.
Power Supply Voltage (V
DD
)
Operating Temperature (T
A
)
Humidity
4.0
-40°
+5
Max.
5.2
+85°
+95
Units
V
C
%
Absolute Maximum Ratings
(Notes 1, 2)
Power Supply Voltage V
DD
Voltage to Any pin
Maximum Power Dissipation
Storage Temperature Range (T
S
)
Lead Temperature solder, 4 sec. (T
L
)
-5.5V to +5.5V
-0.3 to V
DD
+0.3V
300mW
-40°C to +85°C
+260°C
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions indic-
ate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifica-
tions and test conditions, see Electrical Characteristics.
Note 2:
This device is a highly sensitive CMOS ac current amplifier with an ESD rating of JEDEC HBM class 0 (<250V). Handling and as -
sembly of this device should only be done at ESD protected workstations.
Electrical Characteristics
V
DD
= 5.0 V, -40°C < T
A
< +85°C
Symbol
V
PP
Parameter
Ripple on Supply Voltage
epc135
epc138
epc137
epc136
epc139
epc134
I
DD
V
PD
I
PD
Power Supply Current
Reversed Photodiode Voltage
Input Pulse Threshold
(Sensitivity)
epc137
epc135
epc138
epc134
epc136
epc139
I
PDres
I
PDmax
I
PDDC
C
PD
Input Pulse Threshold Re-
serve
Input Pulse Current
DC Light Current Range
Photodiode Capacitance
epc135
epc137
epc138
epc134
epc136
epc139
I
OUT
V
POR
V
IPOR
t
INIT
t
OFF
Output Current (sink)
Power-up Threshold Voltage
Hysteresis
Power-up Startup Time
Power-down Time
When a light pulse above the threshold is detected
The voltage at VDD when the device starts up and the
startup time is running.
on Power-up Threshold Voltage
VDD slew rate >100V/ms
epc134 - Input pulse current relative to I
PD
to trigger the light re-
epc137 serve output
If input current is above this level, recovery time t
REC
is
undefined (refer to section 'Other Parameters')
refer to section 'Application Information, Ambient Light'
refer to section 'Application Information, Photodiode
Capacitance'
0.0
15
All slow no photo diode current
All fast
relative to VDD
Photodiode current pulse to generate an output pulse
60
200
600
0.45
0.75
VDD-
1.55
40
80
400
800
150
100
3.0
50
100
600
1000
Sinusoidal 800kHz, refer to other parameters
Conditions/Comments
Min.
Sinusoidal 100kHz, refer to other parameters
Values
Typ.
Max.
40
22
110
45
0.50
0.80
V
nA
nA
nA
nA
%
μA
mA
pF
mA
mV
pp
Units
30
40
-6.0
3.0
0.5
-8.0
3.5
0.75
-10.0
4.0
1.0
1.5
1.5
mA
V
V
ms
ms
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
2
Datasheet epc13x digital - V2.1
www.espros.ch
EPC [ ESPROS PHOTONICS CORP ]
