epc3xx
High sensitive photodiodes
General Description
Features
The epc3xx family products are high-sensitive photo diodes for
Low dark current
light-barrier, light-curtain, and the like applications. These photo
High quantum efficiency
diodes are designed to be used in a reverse-bias mode.
High dynamic range
Diodes can be used in parallel
This device allows the design of short to long range light barriers
CSP package with very small footprint
from a few millimeters up to tens of meters.
Near infrared and visible version available
Customer specific wavelength filter upon request
Using chips from the epc3xx product line, linear or two dimen-
sional arrays can be formed for any application, be it triangulation,
spot location, angle measurement, rotary encoders, or similar.
Applications
Also, spectral sensitive detectors can easily be designed by
applying color filters in front of the photo diodes.
Light barriers ranging from millimeters to tens of meters
Light curtains
Also, other mechanical dimensions are available upon request. It
Smoke detectors
is be possible to manufacture photo diodes of up to 15x15 mm or
Liquid detectors
even bigger. Such a 15x15 mm device then would contain 450
Heart beat monitors
individual photo diodes, each of them individually accessible. All
Position detection (rotary, linear, angle, etc.)
diodes feature a very high quantum efficiency of 90% in the near
IR remote control of Hi-Fi, TV sets and other equipment
IR range, a reverse breakdown voltage of up to 30 Volts and a
Leveling instruments
response time down to less than 100ns. All devices are available
Differential measurement
upon request with optical bandpass filters.
Linear photo diode arrays
Product Range Overview
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R : refer to chapter “Electrical isolation between individual diodes”
Model
Single diode
epc300
epc310
epc320
epc330
No. of
Photo
Diodes
1
2
4
8
16
Diode
Length
(mm)
1.0
1.0
2.0
2.0
4.0
Diode
Width
(mm)
0.5
1.0
1.0
2.0
2.0
Total Active
Area
(mm
2
)
0.43
0.86
1.71
3.42
6.84
Typ. Dark
Current
at 20°C (pA )
20
40
80
160
320
Ideal Bias
Voltage
(V)
5
5
5
5
5
Wavelength
(nm)
400 - 1050
400 - 1050
400 - 1050
400 - 1050
400 - 1050
Footprint
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CSP4
CSP8
CSP16
CSP32
Type specific characteristics (all diodes of the array connected in parallel)
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
1
Datasheet epc3xx - V2.3
www.espros.ch
EPC [ ESPROS PHOTONICS CORP ]
