LED - Chip
Preliminary
Radiation
Infrared
Type
MQW
10.04.2007
Technology
InGaAs/InP
ELC-1300-17
rev. 04/06
Electrodes
P (anode) up
360
300
typ. dimensions (µm)
typ. thickness
260 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
LED-11
R
6
11
360
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Forward current (DC)
Peak forward current
t
P
≤
50 µs,
= 1/2
t
P
/T
Symbol
I
F
I
FM
Min
Typ
Max
100
200
Unit
mA
mA
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Forward voltage
Reverse voltage
Radiant power
1
Radiant power
1
Radiant power
2
Peak wavelength
Spectral bandwidth at 50%
Switching time
1
2
Symbol
Min
Typ
Max
Unit
I
F
= 20 mA
I
F
= 100 mA
I
R
= 100 µA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
F
V
F
V
R
Φ
e
Φ
e
Φ
e
λ
p
∆λ
0.5
t
r
, t
f
1250
5
0.65
2.5
0.85
0.95
1.0
1.1
V
V
V
0.95
3.5
7.0
1300
70
10
1350
mW
mW
mW
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Measured on epoxy covered chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-1300-17
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
