LED - Chip
Preliminary
Radiation
Violet
Type
Standard
10.04.2007
Technology
InGaN/Al
2
O
3
ELС-410-37
rev. 02/07
Electrodes
Both on top side
380 µm
typ. dimensions in µm (±20 µm)
Ø 90µm
380 µm
350 µm
100 µm
P
typ. thickness
90 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 1.5 µm
N
350 µm
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power
1
Radiant intensity
1
Peak wavelength
Spectral bandwidth at 50%
Switching time
1
Ø100
Symbol
V
F
V
R
Φ
e
Ι
e
λ
p
∆λ
0.5
t
r
, t
f
Min
Typ
3,6
Max
4,5
Unit
V
V
I
F
= 20 mA
I
F
= 10 µA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
5
1,9
1,0
400
3,0
1,3
410
17
20
420
mW
mW/sr
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-410-37
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
