LED - Chip
10.04.2008
Radiation
Violet
Type
Special
Technology
InGaN
ELС-420-21
rev. 01
Electrodes
N (cathode) up
typ. dimensions (±50) µm
typ. thickness
145 (±15) µm
cathode
gold alloy, 2.5 µm
anode
gold alloy, 1.5 µm
Absolute Maximum Ratings
at T
amb
= 25° unless otherwise specified
C,
Parameter
DC forward current
Peak forward current
Operating temperature range
Storage temperature range
Junction temperature
t
p
≤100
µs, D = 0.05
Test
сonditions
Symbol
I
F
I
FM
T
amb
T
stg
T
j
Value
500
2
-40 to +110
-40 to +110
125
Unit
mA
A
°
C
°
C
°
C
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
I
F
= 20 mA
Forward voltage
Forward voltage
1
Reverse voltage
Radiant power
1
Radiant power
1,2
Peak wavelength
Spectral bandwidth at 50%
Switching time
1)
2)
Symbol
V
F
V
F
V
R
Φ
e
Φ
e
λ
P
∆λ
0.5
t
r
, t
f
Min
Typ
2.8
3.1
Max
3.2
3.5
Unit
V
V
V
I
F
= 350 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 350 mA
I
F
= 350 mA
I
F
= 350 mA
I
F
= 350 mA
5
10
14
240
410
420
20
30
430
mW
mW
nm
nm
ns
Measured on bare chip on TO-66 header
only recommended on optimal heat sink
Labeling
Type
ELС-420-21
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
λ
P
(typ) [nm]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customer themselves.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
