LED - Chip
26.05.2008
Radiation
Blue
Type
Technology
InGaN/Al
2
O
3
ELС-460-31-2
rev. 02
Electrodes
Both on top side
typ. dimensions (µm)
typ. thickness
100 (±10) µm
p and n contact
gold alloy
backside metalization
gold alloy
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward voltage
Forward voltage
2
Reverse voltage
Radiant power
1
Radiant power
1
Luminous intensity
1
Peak wavelength
Dominant wavelength
Spectral bandwidth at 50%
Switching time
1
Symbol
Min
Typ
Max
Unit
I
F
= 20 mA
I
F
= 350 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 350 mA
I
F
= 350 mA
I
F
= 350 mA
I
F
= 350 mA
I
F
= 20 mA
I
F
= 20 mA
V
F
V
F
V
R
Φ
e
Φ
e
Ι
v
λ
P
λ
D
2.7
3.5
5V
14
200
1500
445
455
3.1
V
V
V
18
250
2500
455
465
mW
mW
mcd
465
475
nm
nm
∆λ
0.5
t
r
, t
f
25
50
nm
ns
Measured on bare chip with
EPIGAP
equipment
Labeling
Type
ELС-460-31-2
Lot N°
Ι
V
(typ) [mcd]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
