LED - Chip
Preliminary
Radiation
Yellow
Type
Point Source
10.04.2007
Technology
AlInGaP/GaAs
ELC-595-29-50
rev. 02/06
Electrodes
N (cathode) up
typ. dimensions (µm)
Ø 150
typ. thickness
360
- 10
+ 20
R
30
170 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
PS-03
310
245
450
+ 20
-10
180
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward current (DC)
180
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power*
Luminous intensity*
Peak wavelength
Spectral bandwidth at 50%
Switching time
I
F
= 5 mA
I
R
= 10 µA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
Symbol
V
F
V
R
Φ
e
I
V
λ
p
∆λ
0.5
t
r
, t
f
5
150
30
240
45
595
24
40
Min
Typ
2.2
Max
2.4
Unit
V
V
µW
mcd
nm
nm
ns
*Measured on bare chip on TO-18 header with
EPIGAP
equipment
R
5
15
Symbol
I
F
Min
Typ
Max
35
Unit
mA
Labeling
Type
ELC-595-29-50
Lot N°
I
V
(typ) [mcd]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
