LED - Chip
Preliminary
Radiation
Red
Type
Point Source
10.04.2007
Technology
AlInGaP/GaAs
ELC-645-29-20
rev. 04/07
Electrodes
N (cathode) up
typ. dimensions (µm)
310
Ø 50
+4
typ. thickness
170 (±20) µm
260
-10
+20
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
130
R
10
5
130
360
-10
+20
P S-04
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward current (DC)
Symbol
Min
Typ
Max
Unit
210
I
F
10
mA
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power*
Luminous intensity*
Peak wavelength
Spectral bandwidth at 50%
Switching time
I
F
= 5 mA
I
R
= 10 µA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
Symbol
Min
Typ
Max
Unit
V
F
V
R
Φ
e
I
V
λ
P
∆λ
0.5
t
r
, t
f
5
40
1.7
635
2.0
2.5
V
V
55
2.5
645
25
40/30
660
µW
mcd
nm
nm
ns
*Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELC-645-29-20
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
