LED - Chip
Preliminary
Radiation
Red
Type
Point Source
10.04.2007
Technology
AlInGaP/GaAs
ELC-630-29-10
rev. 02/06
Electrodes
N (cathode) up
typ. dimensions (µm)
290
Ø 28
- 2
+3
typ. thickness
170 (±20) µm
230
- 10
+ 20
115
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
R
85
115
350
- 10
+ 20
PS-05
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward current (DC)
170
Symbol
Min
Typ
Max
Unit
I
F
7
mA
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power*
Luminous intensity*
Peak wavelength
Spectral bandwidth at 50%
Switching time
I
F
= 5 mA
I
R
= 10 µA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
Symbol
Min
Typ
Max
Unit
V
F
V
R
Φ
e
I
V
λ
P
∆λ
0.5
t
r
, t
f
5
55
2.0
625
2.3
2.6
V
V
70
3.0
630
25
40/30
635
µW
mcd
nm
nm
ns
*Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELC-630-29-10
Lot N°
I
V
(typ) [mcd]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
