LED - Chip
25.02.2008
Radiation
Red
Type
Point Source
Technology
AlInGaP/GaAs
ELC-630-29-12
rev. 07
Electrodes
N (cathode) up
360
330
±20
typ. dimensions (µm)
Ø 27
+4
-2
typ. thickness
170 (±20) µm
cathode
±20
260
220
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
130
130
PS-13
Maximum Ratings
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward current (DC)
Symbol
I
F
Min
Typ
Max
15
Unit
mA
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power*
Luminous intensity*
Peak wavelength
Spectral bandwidth at 50%
Switching time
I
F
= 5 mA
I
R
= 10 µA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
Symbol
V
F
V
R
Φ
e
I
V
λ
P
∆λ
0.5
t
r
, t
f
5
30
1.2
620
40
1.6
630
25
40/30
635
Min
Typ
2.3
Max
2.6
Unit
V
V
µW
mcd
nm
nm
ns
*Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELC-630-29-12
Lot N°
I
V
(typ) [mcd]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
