LED - Chip
Preliminary
Radiation
Red-orange
Type
solderable
10.04.2007
Technology
AlInGaP/GaAs
ELС-645-11-05
rev. 02/06
Electrodes
P (anode) up
1000
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 1.5 µm
PoC-05
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Forward voltage
Reverse voltage
Radiant power
1
Radiant power
1
Luminous intensity
1
Peak wavelength
Spectral bandwidth at 50%
Switching time
1
1000
Symbol
Min
Typ
Max
Unit
I
F
= 100 mA
I
F
= 300 mA
I
F
= 10 µA
I
F
= 100 mA
I
F
= 300 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
F
V
F
V
R
Φ
e
Φ
e
Ι
V
λ
p
∆λ
0.5
t
r
, t
f
225
635
5
4.6
1.9
2.1
2.3
V
V
V
6.0
16
290
645
16
40
655
mW
mW
mcd
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-645-11-05
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
