LED - Chip
Preliminary
Radiation
Red
Type
Point Source
10.04.2007
Technology
AlInGaP/GaAs
ELC-650-29-10
rev. 04/07
Electrodes
N (cathode) up
360
330
Ø 25
±20
typ. dimensions (µm)
typ. thickness
250 µm
220
260
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
±20
130
115
PS-01
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward current (DC)
Symbol
Min
Typ
Max
Unit
I
F
15
mA
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power*
Luminous intensity*
Peak wavelength
Spectral bandwidth at 50%
Switching time
I
F
= 5 mA
I
R
= 10 µA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 5 mA
Symbol
Min
Typ
Max
Unit
V
F
V
R
Φ
e
I
V
λ
p
∆λ
0.5
t
r
, t
f
640
5
15
2.3
2.6
V
V
17
3.0
650
20
40/30
660
µW
mcd
nm
nm
ns
*measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELC-650-29-10
Lot N°
I
V
(typ) [mcd]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
