LED - Chip
discontinued
Radiation
Deep red
Type
solderable
23.05.2007
Technology
AlGaAs/GaAs
ELС-685-21-05
rev. 04/07
Electrodes
N (cathode) up
1000
typ. dimensions (µm)
340
typ. thickness
340
260 (±20) µm
1000
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
Ø
11
0
PoC-02
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Forward voltage
Reverse voltage
Radiant power
Radiant power
1
Radiant power
2
Peak wavelength
Spectral bandwidth at 50%
Switching time
1
2
Symbol
V
F
V
F
V
R
Φ
e
Φ
e
Φ
e
λ
p
∆λ
0.5
t
r
, t
f
Min
Typ
1.7
2.0
Max
2.0
2.4
Unit
V
V
V
I
F
= 20 mA
I
F
= 300 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 300 mA
I
F
= 300 mA
I
F
= 300 mA
I
F
= 300 mA
I
F
= 100 mA
5
1.0
12
1.4
17
33
685
700
40
40/30
710
mW
mW
mW
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Measured on epoxy covered chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-685-21-05
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
