LED - Chip
25.02.2008
Radiation
Infrared
Type
Point Source
Technology
AlGaAs/GaAs
ELC-740-27-70
rev. 05
Electrodes
N (cathode) up
typ. dimensions (µm)
Ø250
+10
-5
typ. thickness
260 (±20) µm
emitting
area
cathode
gold alloy, 1.5 µm
bonding
area
PS-09
anode
gold alloy, 0.5 µm
Ø100
Maximum Ratings
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward current (DC)
Symbol
I
F
Min
Typ
Max
50
Unit
mA
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power*
Peak wavelength
Spectral bandwidth at 50%
Switching time
I
F
= 20 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
Symbol
V
F
V
R
Φ
e
λ
P
∆λ
0.5
t
r
, t
f
5
0.3
730
0.6
740
45
50
750
Min
Typ
1.7
Max
1.9
Unit
V
V
mW
nm
nm
ns
*Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELC-740-27-70
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
