LED - Chip
25.02.2008
Radiation
Infrared
Type
Point Source
Technology
AlGaAs/AlGaAs
ELC-740-29-20
rev. 07
Electrodes
N (cathode) up
typ. dimensions (µm)
180
typ. thickness
180
Ø50
+5
-2
150 (± 25) µm
360
cathode
gold alloy, 1.5 µm
anode
560
PS-08
gold alloy, 0.5 µm
Maximum Ratings
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward current (DC)
Peak forward current
t
P
≤
50 µs,
t
P
/T = 1/2
Symbol
I
F
I
FM
Min
Typ
Max
35
70
Unit
mA
mA
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power
1
Peak wavelength
Spectral bandwidth at 50%
1)
Symbol
V
F
V
R
Φ
e
λ
P
∆λ
0.5
Min
Typ
2.2
Max
2.5
Unit
V
V
I
F
= 20 mA
I
R
= 100 µA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
5
0.5
730
0.9
740
30
750
mW
nm
nm
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELC-740-29-20
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
