LED - Chip
discontinued
Radiation
Infrared
Type
DDH
6/21/2007
Technology
AlGaAs/AlGaAs
ELC-875-22
rev. 06/07
Electrodes
N (cathode) up
650
Ø110
typ. dimensions (µm)
typ. thickness
180 µm
480
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
dotted, 25% covered
LED-07
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward voltage
Forward voltage
Reverse voltage
Radiant power
1
Radiant power
2
Radiant power
3
Radiant intensity
1
Peak wavelength
Spectral bandwidth at 50%
Switching time
1
2
Measured on bare chip on TO-18 header
Measured onbare chip on TO-18 header and heat sink
3
Measured on epoxy chip on TO-18 header and heat sink, 10s current flow (information only)
25
Symbol
V
F
V
F
V
R
Φ
e
Φ
e
Φ
e
Ι
e
λ
p
∆λ
0.5
t
r
, t
f
I
F
= 20 mA
I
F
= 100 mA
I
R
= 100 µA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Min
Typ
1.2
1.45
Max
1.4
1.8
Unit
V
V
V
5
2.5
3.5
17
35
0.75
860
1.0
875
45
20
890
mW
mW
mW
mW/sr
nm
nm
ns
Labeling
Type
ELС-875-22
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with
EPIGAP
equipment
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
