LED - CHIP
Radiation
Type
Technology
ELC-870-27
Electrodes
Infrared
DDH
AlGaAs/AlGaAs
N (cathode) up
Outline
(dimensions in microns)
n-side electrode, gold alloy
epitaxial n-AlGaAs
120
360
150
active layer
epitaxial p-AlGaAs
p-side electrode, gold alloy
360
ELC-07
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Parameter
Forward voltage
Reverse voltage
Radiant power*
Peak wavelength
Spectral bandwidth at 50%
Switching time
Test
conditions
I
F
= 20 mA
I
R
= 100 µA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
Symbol
V
F
V
R
Φ
e
λ
p
∆λ
0.5
t
r
, t
f
5
3.5
860
4.5
875
45
25
890
Min
Typ
1.4
Max
1.7
Unit
V
V
mW
nm
nm
ns
*Measured on bare chip on TO-18 header
Labeling
Type
Lot N°
Φ
e
(min, typ), V
F
(typ, max)
Quantity
ELC-870-27
Packing
Chips on adhesive film with wire-bond side on top
rev.09/02
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str. 325 b, Hs. 201, Tel.: +49-30-6576 2543, Fax.: +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
