LED - Chip
25.02.2008
Radiation
Infrared
Type
Point Source
Technology
AlGaAs/GaAs
ELC-875-19-20
rev. 08
Electrodes
P (anode) up
typ. dimensions (µm)
360
310
typ. thickness
300 (± 20) µm
210
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Ø50
+7
-2
PS-11
Maximum Ratings
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward current (DC)
Peak forward current
t
P
≤
50 µs, t
P
/T
= 1/2
Symbol
I
F
I
FM
Min
Typ
Max
50
100
Unit
mA
mA
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
I
F
= 20 mA
Forward voltage
Forward voltage
Reverse voltage
Radiant power*
Radiant power*
Peak wavelength
Spectral bandwidth at 50%
Switching time
I
F
= 50 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 50 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
Symbol
V
F
V
F
V
R
Φ
e
Φ
e
λ
p
∆λ
0.5
t
r
, t
f
Min
Typ
1.4
1.5
Max
1.8
Unit
V
V
V
5
0.4
0.6
1.9
865
875
40
16
885
mW
mW
nm
nm
ns
*Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-875-19-20
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
