LED - Chip
25.02.2008
Radiation
Infrared
Type
Point Source
Technology
AlGaAs/GaAs
ELC-940-17-70
rev. 06
Electrodes
P (anode) up
typ. dimensions (µm)
Ø250
+10
-5
typ. thickness
260 (±20) µm
emitting
area
cathode
gold alloy, 0.5 µm
bonding
area
PS-09
anode
gold alloy, 1.5 µm
Ø100
Maximum Ratings
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward current (DC)
Peak forward current
t
P
≤50
µs,
t
P
/T = 1/2
Symbol
I
F
I
FM
Min
Typ
Max
100
120
Unit
mA
mA
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power*
Peak wavelength
Spectral bandwidth at 50%
Switching time
I
F
= 100 mA
I
R
= 100 µA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Symbol
V
F
V
R
Φ
e
λ
p
∆λ
0.5
t
r
, t
f
5
0.5
930
0,8
940
50
600
950
Min
Typ
1.4
Max
1.6
Unit
V
V
mW
nm
nm
ns
*Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-940-17-70
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545