LED - Lamp
16.11.2007
Radiation
Green
Type
Standard
Technology
AlInGaN/Al
2
O
3
ELD-540-095
rev. 02
Case
TO-39
Description
Ø 7,55
1,25
± 0,04
± 0,08
Ø 5,08
0,45
High-power green LED-Chip on TO-39 package
without covering
Ø 9,00
chip location
1
Note: Special packages without standoff available on request
2
13,46
± 0,75
Applications
45,
00
0,
8
°
0
Customer-specific LED-component
Pin 1 - Cathode
Pin 2 - Anode
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
(t
P
≤
50 µs, t
P
/T = 1/2)
Test
сonditions
Symbol
I
F
I
FM
P
D
T
amb
T
stg
T
J
Value
100
800
300
-40 to +110
-40 to +110
120
Unit
mA
mA
mW
°C
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
I
F
= 20 mA
Forward voltage
Forward voltage*
Reverse voltage
Radiant power
Radiant power*
Luminous intensity
Luminous intensity*
Peak wavelength
Dominant wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
*for information only
I
F
= 100 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Symbol
V
F
V
F
V
R
Φ
e
Φ
e
Ι
v
Ι
v
λ
p
λ
D
∆λ
0.5
ϕ
t
r,
t
f
520
340
5
3.6
5.2
19.5
490
1880
530
540
40
120
45
540
Min
Typ
2.6
2.9
Max
3.3
Unit
V
V
V
mW
mW
mcd
mcd
nm
nm
nm
deg.
ns
Note: All measurements carried out on
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
