LED - Lamp
16.11.2007
Radiation
Infrared
Type
DDH
Technology
AlGaAs/AlGaAs
ELD-810-095-4
rev. 05
Case
TO-46
Description
High-power, high-speed infrared LED in
hermetically sealed TO-46 package, mounted on
reflector header for beam forming
Note: Special packages with standoff available on request
Ø 0,45 ± 0.04
Ø 5,40 ± 0,1
0,60 ± 0,15
Ø 4,0 ± 0,1
Cathode
Ø 4,65 ± 0,08
2,54 ± 0,15
0,28
Anode
Chip Location
1,2
27,0 ± 1,6
2,8 ± 0,15
Applications
Optical communications, safety equipment,
automation, optical sensors, encoders
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
(t
P
≤
50 µs, t
P
/T = 1/2)
Test
сonditions
Symbol
I
F
I
FM
P
D
T
amb
T
stg
T
J
Value
100
200
220
-40 to +100
-55 to +100
100
Unit
mA
mA
mW
°C
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
I
F
= 20 mA
Forward voltage
Forward voltage*
Reverse voltage
Radiant power
Radiant power*
Radiant intensity*
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
*measured after 30s current flow
Symbol
V
F
V
F
V
F
Φ
e
Φ
e
Ι
e
λ
p
∆λ
0.5
ϕ
t
r,
t
f
Min
Typ
1.6
1.7
Max
1.9
2.1
Unit
V
V
V
mW
mW
mW/sr
I
F
= 100 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
5
1.8
2.2
10
8
800
810
35
90
40
820
nm
nm
deg.
ns
Note: All measurements carried out on
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
