LED - Lamp
15.11.2007
Radiation
Infrared
Type
DDH
Technology
AlGaAs/AlGaAs
ELD-880-595
rev. 05
Case
5 mm flat plastic case
Description
High-power, high-speed infrared LED,
wide beam angle, housing with standoff leads
32,5
Ø5,4
Ø4,8
±0,1
±0,1
±1,0
8,0
±0,2
0,7 max
±0,1
2,0
±0,2
0,5
Anode
±0,2
Note: Special packages without standoff available on request
2,5
Applications
Optical communications, safety equipment,
automation
1,25
±0,2
1,0
1,5
±0,5
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
(t
P
≤
50 µs, t
P
/T = 1/2)
Test
сonditions
Symbol
I
F
I
FM
P
D
T
amb
T
stg
T
J
Value
100
1000
180
-20 to +80
-40 to +100
100
Unit
mA
mA
mW
°C
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Parameter
Forward voltage
Forward voltage
Reverse voltage
Radiant power
Radiant power
Radiant intensity
Radiant intensity
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
Test
conditions
I
F
= 20 mA
I
F
= 100 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 100 mA
I
F
=100 mA
I
F
=100 mA
I
F
=100 mA
I
F
=100 mA
Symbol
V
F
V
F
V
R
Φ
e
Φ
e
Ι
e
Ι
e
λ
p
∆λ
0.5
ϕ
t
r,
t
f
870
0.5
5
5
7
30
0.8
3.8
880
65
110
10
890
Min
Typ
1.2
1.4
Max
1.4
Unit
V
V
V
mW
mW
mW/sr
mW/sr
nm
nm
deg.
ns
Note: All measurements carried out on
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 3
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
