LED - Lamp
15.11.2007
Radiation
Infrared
Type
DH
Technology
AlGaAs/GaAs
ELD-940-535
rev. 02
Case
5 mm plastic lens
Description
High-power, high-speed infrared LED in the
widely used 940 nm range. Mounted in standard
5 mm housing without standoff leads
5,75
- 0,3
0,8
- 0,4
8,6
1
Anode
Note: Special packages with standoff available on request
2,54
Applications
1,5
36,5
± 1,0
0,6
- 0,2
Ø5
Optical communications, safety equipment,
automation, optical sensors, medical appliances
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Soldering temperature
t
≤
5 s, 3 mm from case
(t
P
≤
50 µs, t
P
/T = 1/2)
Test
сonditions
Symbol
I
F
I
FM
P
D
T
amb
T
stg
T
J
T
Sd
Value
150
250
250
-20 to +80
-40 to +100
100
260
Unit
mA
mA
mW
°C
°C
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
I
F
= 20 mA
Forward voltage
Forward voltage*
Reverse voltage
Radiant power
Radiant power*
Radiant intensity
Radiant intensity*
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
*measured after 30s current flow
Symbol
V
F
V
F
V
F
Φ
e
Φ
e
Ι
e
Ι
e
λ
p
∆λ
0.5
ϕ
t
r,
t
f
Min
Typ
1.2
1,3
Max
1.4
Unit
V
V
V
mW
mW
mW/sr
mW/sr
I
F
= 100 mA
I
R
= 100 µA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
5
4,5
10
50
930
6.5
32
14
70
940
45
30
500
950
nm
nm
deg.
ns
Note: All measurements carried out on
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
