LED - Lamp
15.11.2007
Radiation
Infrared
Type
DH
Technology
AlGaAs/GaAs
ELD-940-525-1
rev. 03
Case
5 mm plastic lens
Description
High-power NIR-LED, housing without standoff
leads
8,6
1
Anode
5,75
- 0,3
2,54
0,8
- 0,4
Note: Special packages with standoff available on request
1,5
36,5
± 1,0
0,6
Ø5
Applications
- 0,2
Remote control, safety equipment, automation
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
(t
P
≤
50 µs, t
P
/T = 1/2)
Test
сonditions
Symbol
I
F
I
FM
P
D
T
amb
T
stg
T
J
Value
100
200
280
-20 to +100
-55 to +100
100
Unit
mA
mA
mW
°C
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
I
F
= 100 mA
Forward voltage
Reverse voltage
Radiant power
Radiant intensity
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
I
R
= 10 µA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Symbol
V
F
V
R
Φ
e
Ι
e
λ
P
∆λ
0.5
ϕ
5
25
50
925
35
70
940
50
20
600
955
Min
Typ
1,4
Max
1,6
Unit
V
V
mW
mW/sr
nm
nm
deg.
ns
I
F
= 100 mA
t
r,
t
f
Switching time
Note: All measurements carried out on
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
