LED - Lamp
16.11.2007
Radiation
Infrared
Type
Point source (ball lens)
Technology
AlGaAs/GaAs
ELP-880-014-1
rev. 04
Case
TO-18 + flat window
Description
High power, high speed infrared point source LED,
high reliability, small-size emitting aperture
0,4
Ø 0,45
Ø0,55
Ø5,4
Cathode
Ø2,4
2,54
Cathode
Ø4,65
Anode
Anode
0,25
2,0
13,5
±1,0
±0,1
Applications
Optical communications, safety equipment,
automation, optical sensors, optical switches
3,3
±0,2
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
t
≤
5 s, 3 mm from case
(t
P
≤
50 µs, t
P
/T = 1/2)
Test
сonditions
Symbol
I
F
I
FM
P
D
T
amb
T
stg
T
sd
Value
80
400
150
-30 to +100
-40 to +125
260
Unit
mA
mA
mW
°C
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
I
F
= 50 mA
Forward voltage
Reverse voltage
Radiant power
Radiant intensity
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
I
R
= 10 µA
I
F
= 50 mA
I
F
= 50 mA
I
F
= 50 mA
I
F
= 50 mA
I
F
= 50 mA
I
F
= 50 mA
Symbol
V
F
V
R
Φ
e
Ι
e
λ
p
∆λ
0.5
ϕ
t
r,
t
f
5
2,5
23
3,5
36
Min
Typ
Max
Unit
V
V
mW
mW/sr
1.8
2.3
865
875
35
12
16
885
nm
nm
deg.
ns
Note: All measurements carried out on
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
