SMD-LED
16.11.2007
Radiation
Infrared
Type
SMD
Technology
AlGaAs/AlGaAs
ELS-870-195-1
rev. 04
Case
SMD 1206
Description
1,6
0,5
Cathode mark
Die
High-power, high speed LED in standard
SMD package, compact design allows for
easy circuit board mounting or
assembling of arrays
3,2
2,0
2,2
Applications
Optical communications, remote control
and light barriers, measurement
applications and security systems,
automation
All dimensions in mm
Tolerances: ±0,1mm
Absolute Maximum Ratings
at T
amb
= 25°C, unless otherwise specified
Parameter
DC forward current
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
t
p
≤
10 µs, t
p
/T
≤
0.1
Test
сonditions
Symbol
I
F
I
FM
P
T
amb
T
stg
Value
100
1000
200
-20 to +85
-30 to +100
Unit
mA
mA
mW
°C
°C
Electrical and Optical Characteristics
at T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Forward voltage
Reverse voltage
Radiant power
Radiant intensity
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
I
F
= 20 mA
I
F
= 100 mA
I
F
= 10 µA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Symbol
V
F
V
F
V
R
Φ
e
Ι
e
λ
p
∆λ
0.5
ϕ
t
r
, t
f
850
5
20
25
7,2
870
40
150
15
880
Min
Typ
1,4
1,5
Max
1,7
Unit
V
V
V
mW
mW/sr
nm
nm
deg.
ns
Note: All measurements carried out with
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
R
0,2
5
1,05
0,5
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
