Photodiode-Chip
16.05.2008
EPC-1300-3.0-3
rev. 03
T y p ic a l O p tic a l R e s p o n s iv ity
1 ,0
0 ,8
Responsivity (A/W)
0 ,6
0 ,4
0 ,2
0 ,0
400
600
800
1000
1200
1400
1600
1800
W a v e le n g th [n m ]
D a rk C u rre n t v s . A m b ie n t T e m p e ra tu re
100
Dark Current [nA]
T
K
= 0 .7 4 % /K
10
1
20
40
60
80
100
120
A m b ie n t T e m p e ra tu re [°C ]
S h o rt-C irc u it C u rre n t v s . A m b ie n t T e m p e ra tu re [T
C
]
Short-Circuit Current
[
arb. units
]
1 ,0 4
1 ,0 2
1 ,0 0
0 ,9 8
0 ,9 6
0 ,9 4
0 ,9 2
0 ,9 0
T
C
(I
S H
) = -0 .3 7 % /K
0
20
40
60
80
100
120
140
A m b ie n t T e m p e ra tu re [°C ]
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
2 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
