Photodiode-Chip
Preliminary
Wavelength range
UV-blue-green
Type
Schottky Contact
11.04.2007
Technology
GaP
EPC-440-0.9
rev. 04/07
Electrodes
P (anode) up
860
800
720
typ. dimensions (µm)
typ. thickness
300 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
PD-03
Description
High spectral sensitivity in
the blue and ultraviolet
range, low dark currents,
low cost chip with high
degradation stability
Applications
special light barriers,
sensors for flame control
and automation
Miscellaneous Parameters
T
amb
= 25° unless otherwise specified
C,
Parameter
Active area
Temperature coefficient of I
D
Operating temperature range
Storage temperature range
Test
сonditions
Symbol
A
T
C
(I
D
)
T
amb
T
stg
Value
0.51
1.07
-40 to +125
-40 to +125
Unit
mm²
1/K
°
C
°
C
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
V
R
= 5 V
Dark current
Peak sensitivity wavelength
Responsivity at
λ
P
*
Sensitivity range at 1%
Spectral bandwidth at 50%
Shunt resistance
Noise equivalent power
Junction capacitance
Switching time
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 10 mV
λ
= 440 nm
V
R
= 0 V
V
R
= 5 V
Symbol
I
D
λ
p
S
λ
λ
min
,
λ
max
∆λ
0.5
R
D
NEP
C
J
100
<110
180
125
7.7x10
-15
120
0.7/13
Min
Typ
5
440
0.17
570
Max
20
Unit
pA
nm
A/W
nm
nm
GΩ
W/ Hz
pF
t
r
, t
f
ns
*Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
EPC-440-0.9
Typ. I
D
[pA]
Typ. S
λ
[A/W]
Lot N°
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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