Photodiode-Chip
Preliminary
Wavelength range
Green, selective
Type
Integrated filter
11.04.2007
Technology
GaP
EPC-525-0.5-2
rev. 03/07
Electrodes
P (anode) up
430
Ø100
typ. dimensions (µm)
typ. thickness
270 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
470
Description
Narrow bandwidth and
high spectral sensitivity in
the range of max. eye
responsivity (480…560
nm), low cost chip
Applications
Nearly Vג matched
detection, measurement
systems, daylight sensors
Miscellaneous Parameters
T
amb
= 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
Temperature coefficient of I
D
Temperature coefficient of I
PH
Temperature coefficient of
λ
c
T = -40…120°C
T = -40…120°C
T = -40…120°C
Test
сonditions
Symbol
A
T
amb
T
stg
TC
ID
TC
IPH
TC
λc
Value
0.18
-40 to +125
-40 to +125
4.7
0.25
0.15
Unit
mm²
°C
°C
%/K
%/K
nm/K
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Spectral range at 0.5 max.
Responsivity at 525 nm
1
Responsivity at 525 nm
2
Spectral bandwidth at 50%
Dark current (E
e
= 0 W/m²)
Central sensitivy wavelength
1
2
Symbol
λ
0.5
S
λ
S
λ
∆λ
0,5
I
D
λ
C
Min
480
0.04
0.15
Typ
Max
560
Unit
nm
A/W
A/W
nm
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 5 V
V
R
= 0 V
0.08
0.25
75
5
0.15
0.38
30
535
pA
nm
510
525
Measured on bare chip on TO-18 header
Measured on epoxy covered chip on TO-18 header
Type
EPС-525-0.5-2
Typ. I
D
[pA]
Typ. S
λ
[A/W]
Lot N°
Quantity
Labeling
Packing:
Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with
EPIGAP
equipment
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
