Photodiode-Chip
Preliminary
Wavelength range
Green, selective
860
EPC-525-0.9-1
26.04.2007
Type
Integrated filter
Technology
GaP
rev. 09/07
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
270 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Description
Narrow bandwidth and
high spectral sensitivity in
the range of max. eye
responsivity (480..560 nm),
low cost chip
Applications
Nearly Vג matched
detection, measurement
systems, daylight sensors
Ø120
PD-08
Miscellaneous Parameters
T
amb
= 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
Temperature coefficient of I
D
Temperature coefficient of I
PH
Temperature coefficient of
λ
c
T = -40…120°C
T = -40…120°C
T = -40…120°C
Test
сonditions
Symbol
A
T
amb
T
stg
T
C
(I
D
)
T
C
(I
Ph
)
T
C
(λ
c
)
Value
0.73
-40 to +125
-40 to +125
4.7
0.25
0.15
Unit
mm²
°C
°C
%/K
%/K
nm/K
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
V
R
= 5 V
Dark current
Responsivity at 525 nm
1)
Responsivity at 525 nm
2)
Peak sensitivity wavelength
Sensitivity range at 1%
1)
Spectral bandwidth at 50%
Dark resistance
Noise equivalent power
1)
Junction capacitance
Switching time (R
L
= 50
Ω)
1)
2)
Symbol
I
D
S
λ
S
λ
λ
p
λ
min
,
λ
max
∆λ
0.5
R
D
NEP
C
J
t
r
, t
f
Min
Typ
5
Max
30
Unit
pA
A/W
A/W
nm
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 10 mV
λ
= 525 nm
V
R
= 0 V
V
R
= 1 V
0.04
0.15
410
0.08
0.3
525
580
70
350
1.6x10
-14
100
35
nm
nm
GΩ
WHz
1/2
pF
ns
Measured on bare chip on TO-18 header
Measured on epoxy covered chip on TO-18 header
Typ. I
D
[pA]
Typ. S
λ
[A/W]
Lot N°
Quantity
Labeling
Type
EPС-525-0.9-1
Packing:
Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with
EPIGAP
equipment
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 2
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
