Photodiode-Chip
Preliminary
Wavelength range
Infrared, selective
460
360
300
EPC-880-0.5
11.04.2007
Type
Integrated filter
Technology
AlGaAs/GaAs
rev. 04/07
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
300 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Description
Infrared-selective photo-
diode with narrow
response range
(810 - 950 nm)
Applications
Optical communications,
safety equipment, light
barriers
PD-02
Miscellaneous Parameters
T
amb
= 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
Test
сonditions
Symbol
A
T
amb
T
stg
Value
0.17
-40 to +125
-40 to +125
Unit
mm²
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Dark current
Peak sensitivity
Spectral range at 50 %
Spectral bandwidth at 50%
Responsivity at
λ
P1
Switching time
1
Symbol
I
D
λ
P
λ
0.5
∆λ
0.5
S
λ
t
r,
t
f
Min
Typ
Max
Unit
nA
nm
V
R
= 1 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 1 V
1.0
890
820
115
0.15
0.25
15/30
2.5
935
nm
nm
A/W
ns
Measured on bare chip on TO-18 header
Labeling
Type
EPС-880-0.5
Typ. I
D
[pA]
Typ. S
λ
[A/W]
Lot N°
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with
EPIGAP
equipment
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 2
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
