Photodiode-Chip
Preliminary
Wavelength range
Infrared, selective
Type
Integrated filter
23.05.2007
Technology
GaAs
EPC-880-0.9-1
rev. 01/07
Electrodes
P (anode) up
860
typ. dimensions (µm)
typ. thickness
300 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Ø120
PD-08
Description
Infrared-selective photo-
diode with narrow
response range
(810 - 950 nm)
Applications
Optical communications,
safety equipment, light
barriers
Miscellaneous Parameters
T
amb
= 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
Test
сonditions
Symbol
A
T
amb
T
stg
Value
0.72
-40 to +125
-40 to +125
Unit
mm²
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Reverse voltage
3
Dark current
Peak sensitivity
Spectral range at 50 %
Responsivity at
λ
P1
Responsivity at
λ
P2
Spectral bandwidth at 50%
1
2
Symbol
V
R
I
D
λ
P
λ
0.5
S
λ
S
λ
∆λ
0,5
Min
5
Typ
Max
Unit
V
I
R
= 10 µA
V
R
= 1 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
1.0
890
820
0.15
0.25
0.55
115
2.5
nA
nm
935
nm
A/W
A/W
nm
Measured on bare covered chip on TO-18 header
Measured on epoxy covered chip on TO-18 header
3
information only
Labeling
Type
EPС-880-0.9-1
Typ. I
D
[pA]
Typ. S
λ
[A/W]
Lot N°
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with
EPIGAP
equipment
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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