Photodiode
Preliminary
Wavelength
Infrared
Type
Planar
6/21/2007
Technology
InGaAs/InP
EPD-1300-0-0.5
rev. 03/07
Case
TO-18
Description
InGaAs-Photodiode mounted in TO-18
standard package covered with epoxy.
High spectral sensitivity in the infrared
range (NIR, SWIR).
Ø 5,40 ± 0,1
Au-plating
Ø 0,45
epoxy-lens
Cathode
Ø 4,2 ± 0,2
2,54 ± 0,2
45°
Applications
Optical communications,
safety equipment, light barriers
1,
0
Anode
0,2
2,0 ± 0,2
13,5 ± 1,0
2,8 ± 0,4
TO-18+epoxy
Miscellaneous Parameters
T
amb
= 25° unless otherwise specified
C,
Parameter
Active area
Temperature coefficient
Operating temperature range
Storage temperature range
Test
сonditions
Symbol
A
T
C
(I
D
)
T
amb
T
stg
Value
0.196
0.074
-40 to +85
-40 to +100
Unit
mm²
1/K
°
C
°
C
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
I
F
= 10 mA
Forward voltage
Breakdown voltage
2)
Sensitivity range at 10 %
Spectral bandwidth at 50 %
Responsivity at 1300 nm
1)
Dark current
Shunt resistance
Noise equivalent power
Specific detectivity
Junction capacitance
1)
2)
Symbol
V
F
V
R
λ
∆λ
0,5
S
λ
I
D
R
SH
NEP
D*
C
J
Min
Typ
0.8
Max
Unit
V
V
I
R
= 10 µA
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 5 V
V
R
= 10 mV
λ
= 1300 nm
λ
= 1300 nm
V
R
= 0 V
5
800
680
0.9
250
0.5
1.0
1.1x10
-14
4.0x10
12
45
1000
1750
nm
nm
A/W
pA
G
W/ Hz
cm
⋅
Hz
⋅
W
−
1
pF
measured on bare chip on TO-18 header
for information only
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 2
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
