Photodiode
Preliminary
Wavelength
Infrared
Type
Planar
6/21/2007
Technology
InGaAs/InP
EPD-1300-0-3.0
rev. 04/07
Case
TO-39
Description
InGaAs-Photodiode mounted in TO-39
standard package . High spectral
sensitivity in the infrared range (NIR ,
SWIR) due to large active area.
3,25
0,45
± 0,1
Chip Location
9,
± 0,1
± 0,1
90
±
0,
1
Ø7,62
Ø9,14
5,90
8,13
Applications
Optical communications,
safety equipment, light barriers
Anode
0,
13,5
± 1,0
2,00
± 0,05
80
±
Chip Location
ELC-70
0
0,
5
45,
00°
Miscellaneous Parameters
T
amb
= 25° unless otherwise specified
C,
Parameter
Active area
Temperature coefficient
Operating temperature range
Storage temperature range
Test
сonditions
Symbol
A
T
C
(I
D
)
T
amb
T
stg
Value
7.0
7.4
-40 to +85
-40 to +100
Unit
mm²
%/K
°
C
°
C
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Parameter
Forward voltage
Breakdown voltage
2)
Sensitivity range at 10 %
Spectral bandwidth at 50 %
Responsivity at 1300 nm
1)
Dark current
Shunt resistance
Noise equivalent power
Specific detectivity
Junction capacitance
Photo current at 1300 nm
2)
1)
2)
Test conditions
I
F
= 10 mA
I
R
= 10 µA
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 5 V
V
R
= 10 mV
λ
= 1300 nm
λ
= 1300 nm
V
R
= 0 V
V
R
= 0 V
E
e
= 1mW/cm²
Symbol
V
F
V
R
λ
∆λ
0,5
S
λ
I
D
R
SH
NEP
D*
C
J
I
Ph
Min
Typ
0.6
Max
Unit
V
V
5
800
680
0.9
5
15
30
5.2x10
-14
5.1x10
12
1000
15
1300
30
1750
nm
nm
A/W
nA
M
W/ Hz
cm
⋅
Hz
⋅
W
−
1
pF
µA
measured on bare chip
for information only
Note: All measurements carried out with
EPIGAP
equipment
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 2
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
