Photodiode
Preliminary
Wavelength
Infrared
Type
Planar
6/21/2007
Technology
InGaAs/InP
EPD-1300-5-0.2
rev. 06/07
Case
5 mm plastic lens
Description
9,15
1
Anode
5,75
- 0,3
0,8
- 0,4
0,6
- 0,2
InGaAs-Photodiode mounted in standard 5 mm
package without standoff . High spectral
sensitivity in the infrared range (NIR, SWIR).
Note: Special packages with standoff available on request
2,54
Applications
1,5
36,5
± 1,0
Ø5
Optical communications,
safety equipment, light barriers
Miscellaneous Parameters
T
amb
= 25° unless otherwise specified
C,
Parameter
Active area
Temperature coefficient
Operating temperature range
Storage temperature range
Test
сonditions
Symbol
A
T
C
(I
D
)
T
amb
T
stg
Value
0.032
7.4
-40 to +85
-40 to +100
Unit
mm²
%/K
°
C
°
C
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Parameter
Forward voltage
Breakdown voltage
2)
Sensitivity range at 10 %
Spectral bandwidth at 50 %
Responsivity at 1300 nm
1)
Dark current
Shunt resistance
Noise equivalent power
Specific detectivity
Junction capacitance
Photo current at 1300 nm*
1)
2)
Test conditions
I
F
= 10 mA
I
R
= 10 µA
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 5 V
V
R
= 10 mV
λ
=1300 nm
λ
= 1300 nm
V
R
= 0 V
V
R
= 0 V
E
e
= 1mW/cm²
Symbol
V
F
V
R
λ
∆λ
0,5
S
λ
I
D
R
SH
NEP
D*
C
J
I
Ph
Min
Typ
1.7
Max
Unit
V
V
5
800
680
0.9
30
3
5
4.0x10
-15
4.5x10
12
11
0.95
200
1750
nm
nm
A/W
pA
G
W/ Hz
cm
⋅
Hz
⋅
W
−
1
pF
µA
measured on bare chip
for information only
Note: All measurements carried out with
EPIGAP
equipment
Labeling
Type
EPD-1300-5-0.2
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 2
Lot N°
RD (typ.) [G ]
Quantity
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
