Photodiode
Preliminary
EPD-740-9-0.4
6/28/2007
rev. 01/07
Case
TOPLED
Type
SMD
Technology
AlGaAs/AlGaAs
Wavelength
Infrared
Description
2,8 ± 0,2
2,2 ± 0,1
Cathode
1,9 ± 0,2
1
Ø 2,4 ± 0,2
3,1 ± 0,2
3,5 ± 0,2
Selective photodiode mounted in TOPLED
PLCC-2
package, for easy circuit board mounting and
assembling of arrays. Narrow response range (740
nm peak) by means of integrated filter
Applications
Optical communications, safety equipment, light
barriers
0,15
0,5 ± 0,2
0,8
2
Anode
1
Cathode
ELC-68
Miscellaneous Parameters
T
amb
= 25° unless otherwise specified
C,
Parameter
Active area
Temperature coefficient of I
D
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% S
λ
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Parameter
Breakdown voltage
1)
Dark current
Responsivity at 740 nm
1)
Spectral range at 10 %
Spectral bandwidth at 50%
Shunt resistance
Noise equivalent power
Specific detectivity
Junction capacitance
Switching time
Photo-current at
λ
P 2)
1)
2)
Test
сonditions
Symbol
A
T
C
(I
D
)
T
amb
T
stg
T
sld
ϕ
Value
0.09
5
-20 to +85
-40 to +90
240
120
Unit
mm²
%/K
°
C
°
C
°
C
deg.
Test conditions
I
R
= 10 µA
V
R
= 5 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 10 mV
λ
= 740 nm
λ
= 740 nm
V
R
= 0 V
V
R
= 5 V
V
R
= 0 V
E
e
= 1mW/cm²
Symbol
V
R
I
D
S
λ
λ
0.5
∆λ
0.4
R
SH
NEP
D*
C
J
t
r,
t
f
I
Ph
Min
5
Typ
Max
Unit
V
40
0.5
680
115
350
7.2x10
-15
4.2x10
12
40
15/30
760
200
pA
A/W
770
nm
nm
G
W/ Hz
cm
⋅
Hz
⋅
W
−
1
pF
ns
nA
for information only
Halogen lamp source with appropriate filter
Note: All measurements carried out with
EPIGAP
equipment
Labeling
Type
EPD-740-9-0.4
Lot N°
R
D
(typ.) [G ]
Quantity
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 2
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
