SMD-Photodiode
28.01.2008
Wavelength
Infrared
Type
SMD
Technology
GaAs
EPD-880-1-0.9-1
rev. 01
Case
SMD 1206
Description
Selective photodiode with narrow
bandwidth and high spectral sensitivity in
the infrared range (810…950 nm).
Compact design in standard SMD
package allows for easy circuit board
mounting and assembling of arrays.
Applications
Alarm systems, light barriers, special
sensors
Miscellaneous Parameters
T
amb
= 25° unless otherwise specified
C,
Parameter
Active area
Temperature coefficient of I
D
Operating temperature range
Storage temperature range
Test
сonditions
Symbol
A
TCI
D
T
amb
T
stg
Value
0.62
5
-20 to +85
-40 to +125
Unit
mm²
%/K
°
C
°
C
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Parameter
Breakdown voltage
1)
Dark current
Peak sensitivity wavelength
Responsivity at
λ
P
Sensitivity range at 10%
1)
Spectral bandwidth at 50%
Shunt resistance
Noise equivalent power
Specific detectivity
Junction capacitance
Switching time (R
L
= 50
1)
Test conditions
I
R
= 10 µA
V
R
= 1 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 10 mV
λ
= 880 nm
λ
= 880 nm
V
R
= 0 V
)
V
R
= 1 V
Symbol
V
R
I
D
λ
p
S
λ
λ
min
,
λ
max
∆λ
0.5
R
SH
NEP
D*
C
J
t
r
, t
f
Min
5
Typ
Max
Unit
V
1.0
890
0.3
800
115
205
3.2x10
-14
2.4x10
12
500
175
0.55
2.5
nA
nm
A/W
960
nm
nm
GΩ
W/ Hz
cm
⋅
Hz
⋅
W
−
1
pF
ns
for information only
Labeling
Type
EPD-880-1-0.9-1
*Note: All measurements carried out with
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Lot N°
Typ. S
λ
[A/W]
Quantity
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
