Photodiode
Preliminary
EPD-880-3-0.9
6/21/2007
rev. 02/07
Case
3 mm plastic lens
Type
Integrated filter
Technology
AlGaAs/GaAs
Wavelength
Infrared
4,8
- 0,4
Anode
3,4
- 0,3
2,9
- 2,0
0,6
- 0,2
Description
Selective photodiode mounted in standard 3 mm
package without standoff. Narrow bandwidth and
high spectral sensitivity in the infrared range
(810…950 nm).
Note: Special packages with standoff available on request
2,54
1,8
-0,6
29
- 2,0
3,7
- 0,2
0,6
- 0,2
6,1
- 0,4
Applications
Alarm systems, light barriers, special sensors,
analytics, optical communication
Miscellaneous Parameters
T
amb
= 25° unless otherwise specified
C,
Parameter
Active area
Temperature coefficient of I
D
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% S
λ
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Parameter
Breakdown voltage
1)
Dark current
Peak sensitivity wavelength
Responsivity at
λ
P
Sensitivity range at 10%
1)
Spectral bandwidth at 50%
Shunt resistance
Noise equivalent power
Specific detectivity
Junction capacitance
Switching time (R
L
= 50
)
Test conditions
I
R
= 10 µA
V
R
= 1 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 10 mV
λ
= 880 nm
λ
= 880 nm
V
R
= 0 V
V
R
= 1 V
V
R
= 0 V
E
e
= 1mW/cm²
Symbol
V
R
I
D
λ
p
S
λ
λ
min
,
λ
max
∆λ
0.5
R
SH
NEP
D*
C
J
t
r
, t
f
I
Ph
0.3
800
115
115
3.3x10
-14
2.4x10
12
120
200
14
Min
5
1.0
890
0.55
960
2.5
Typ
Max
Unit
V
nA
nm
A/W
nm
nm
GΩ
t
≤
3 s, 3 mm from case
Test
сonditions
Symbol
A
T
C
(I
D
)
T
amb
T
stg
T
sld
ϕ
Value
0.62
5
-20 to +85
-30 to +100
260
60
Unit
mm²
%/K
°
C
°
C
°
C
deg.
W/ Hz
cm
⋅
Hz
⋅
W
−
1
pF
ns
µA
Photo-current at
λ
P
= 875 nm
1)
2)
for information only
Halogen lamp source with appropriate filter
Note: All measurements carried out with
EPIGAP
equipment
Labeling
Type
EPD-880-3-0.9
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Lot N°
R
D
(typ.) [G ]
Quantity
1 of 2
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
