DATA SHEET
ASIC
S1L50000
S1L50000 SERIES HIGH DENSITY GATE ARRAY
DESCRIPTION
EPSON Electronics America, Inc.’s
S1L50000
Series is a family of ultra high-speed VLSI CMOS
gate array utilizing a 0.35µm “sea-of-gates” architecture. The
S1L50000H
products feature 5V
tolerant I/O buffers.
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Ultra-high-speed, high density and low power consumption
Low voltage operation: 3.3V and 2.0V
Number of raw gates: 28,710 ~ 815,468 gates
FEATURES
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Process
Integration
Operating Speed
0.35µm 2/3/4 layer metalization CMOS process
A maximum of 815,468 gates (2 input NAND gate equivalent)
Internal gates: 140 ps (3.3V Typ), 210 ps (2.0V Typ)
(2-input pair NAND, F/O = 2, Typical wire load)
Input buffer: 380 ps (5.0V Typ) Built-in level shifter is used.
400 ps (3.3V Typ), 1.30 ns (2.0V Typ)
(F/O = 2, Typical wire load)
Output buffer: 2.12 ns (5.0V Typ) Built-in level shifter is used.
2.02 ns (3.3 V Typ), 3.90 ns (2.0V Typ)
(C
L
= 15 pF)
Input/Output TTL/CMOS/LVTTL compatible
TTL, CMOS, LVTTL, TTL Schmitt, CMOS Schmitt, LVTTL Schmitt, PCI
Built-in pull-up and pull-down resistors can be usable.
(2 types for each resistor value)
Normal, 3-state, bi-directional, PCI
I
OL
= 0.1, 1, 3, 8, 12, 24 mA selectable
(Built-in level shifter is used at 5.0V)
I
OL
= 0.1, 1, 2, 6, 12 mA selectable (at 3.3V)
I
OL
= 0.05, 0.3, 0.6, 2, 4 mA selectable (at 2.0V)
Asynchronous 1-port, asynchronous 2-port
Operation supported by using level-shifter circuit
Internal logic: Operation supported by low voltage
I/O Buffer:
Built-in interfaces of both high and low voltages possible
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I/F Levels
Input Modes
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Output Modes
Output Drive
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RAM
Dual Power
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Operation possible at V
DD
= 2.0
±
0.2V
EPSON ELECTRONICS AMERICA, INC.
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150 River Oaks Pkwy
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San Jose, CA 95134
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Tel: (408) 922-0200
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Fax: (408) 922-0238
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