Crystal oscillator
FULL-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-51 series
SG-531 series
Product number (please refer to page 1)
HALF-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
Q3 2 5 1 0 x x x x x x x 0 0
Q3 2 5 3 1 x x x x x x x 0 0
•
•
•
•
Pin compatible with full-size metal can. (SG-51 series)
Pin compatible with half-size metal can. (SG-531 series)
Cylindrical AT-cut crystal unit builtin, thus assuring high reliability.
Use of CMOS IC enables reduction of current consumption.
Actual size
SG-51
SG-531
Specifications (characteristics)
Item
Output frequency range
Power source
voltage
Temperature
range
Symbol
f
0
Specifications
SG-51P/531P
1.0250 MHz to
26.0000 MHz
SG-51PTJ/531PTJ
SG-51PH/531PH
Remarks
Refer to page 31. "Frequency range"
26.0001 MHz to 66.6667 MHz
-0.3
V
to +7.0
V
5.0
V±0.5 V
Max. supply voltage
V
DD
-GND
Operating voltage
V
DD
Storage temperature
T
STG
Operating temperature
T
OPR
∆f/f
0
Iop
I
OE
t
w
/t
V
OH
-0.5 V to +7.0 V
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
B type is possible up to 55.0 MHz
No load condition
OE=GND
1/2 V
DD
level
1.4 V level
I
OH
= -400 µA (P,PTJ) /-4 mA (PH)
I
OL
= 16 mA (P) / 8 mA (PTJ) / 4mA (PH)
C
L
≤15
pF
I
IH
=1 µA Max. (OE=V
DD
)
Frequency stability
Current consumption
Output disable current
CMOS level
Duty
TTL level
Output voltage
Output load
condition (fan out)
CMOS
TTL
Output enable/disable input voltage
Output
rise time
Output
fall time
V
OL
C
L
N
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
CMOS level
TTL level
CMOS level
TTL level
-55 °C to +125 °C
-20
°C
to +70
°C (-40 °C
to +85
°C)
B: ± 50
x 10
-6
C: ±100
x 10
-6
23 mA Max.
35 mA Max.
12 mA Max.
28 mA Max.
20 mA Max.
40 % to 60 %
—
40 % to 60 %
45 % to 55 %
—
V
DD
-0.4 V Min.
2.4 V Min.
V
DD
-0.4 V Min.
0.4 V Max.
50 pF Max.
—
50 pF Max.
10 TTL Max.
5 TTL Max.
—
2.0 V Min.
3.5 V Min.
2.0 V Min.
0.8 V Max.
1.5 V Max.
0.8 V Max.
—
7 ns Max.
8 ns Max.
5 ns Max.
—
—
7 ns Max.
8 ns Max.
5 ns Max.
—
4 ms Max.
10 ms Max.
±5 x 10
-6
/year Max.
±20 x 10 Max.
-6
I
IL
= -100 µA Min. (OE=GND), PTJ: I
IL
= -500 µA Min. (OE=GND)
CMOS load: 20 %→80 % V
DD
TTL load: 0.4 V→2.4 V
CMOS load: 80 %→20 % V
DD
TTL load: 2.4 V→0.4 V
More than for 1 ms until V
DD
=0 V→4.5 V
Time at 4.5 V to be 0 s
Ta=+25 °C, V
DD
=5 V,first year
Oscillation start up time
Aging
Shock resistance
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s
2
x 0.3 ms x 1/2
sine wave in 3 directions
Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
• External by-pass capacitor is recommended.
External dimensions
SG-51 series
19.8 Max.
#14
6.36
#8
(Unit: mm)
SG-531 series
13.7 Max.
NO.
Pin terminal
1
7
8
14
OE
GND
OUT
V
DD
7.62
#8
#5
NO.
1
4
5
8
Pin terminal
OE or ST
GND
OUT
V
DD
7.62
E SG51P 9353B
16.0000MHz C
#1
#7
SG531PTJC
60.0000M
E 9353B
#1
#4
5.3 Max.
0.2 Min.
0.51
2.54 Min.
15.24
Note.
OE Pin (P, PTJ, PH, PTW, PHW, PCW)
OE pin - "H" or "open" : Specified frequency output.
OE pin - "L" : Output is high impedance.
0.25
90° to
105°
5.3 Max.
0.2 Min.
6.6
0.51
2.54 Min.
7.62
90° to
105°
0.25
ST pin (STW, SHW, SCW)
ST pin - "H" or "open" : Specified frequency output.
ST pin - "L" : Output is low level (weak pull - down), oscillation stops.
45
EPSON [ EPSON COMPANY ]
