Crystal oscillator
HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-710 series
•
•
•
•
Ceramic package with 1.5 mm thickness.
Excellent shock resistance and environmental capability.
Low current consumption due to use of C-MOS technology.
Low current consumption by output enabled function (OE) or
standby function (ST).
Specifications (characteristics)
Item
Output frequency range
Power source
voltage
Temperature
range
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
T
SOL
∆f/f
0
Iop
I
OE
I
ST
t
w
/ t
V
OH
V
OL
N
C
L
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
24 mA Max.
12 mA Max.
SG-710PTK
SG-710PHK
Specifications
SG-710ECK
Remarks
1.8000 MHz to
50.0000 MHz
1.8000 MHz to
80.0000 MHz
1.8000 MHz to
67.0000 MHz
-0.5 V to +7.0 V
5.0
V
±0.5
V
3.3
V
±0.3
V
-55 °C to +125 °C
-10
°C
to +70
°C
(-40
°C
to +85
°C
)
Please contact us on availability of -40
°C
to +85
°C
B,C:-10 °C to +70 °C, M:-40 °C to +85 C°
No load condition
OE=GND(PTK, PHK)
ST=GND(ECK)
C-MOS load: 1/2 V
DD
level
TTL load: 1.4 V level
I
OH
=-16 mA(PTK,PHK),-2 mA(ECK)
I
OL
= 16 mA(PTK,PHK), 2 mA(ECK)
Soldering condition
Frequency stability
Current consumption
Output disable current
Standby current
Duty
High output voltage
Low output voltage
Output load
condition (fan out)
Twice at under +260 °C within 10 s
B: ±50 x 10
-6
C: ± 100 x 10
-6
M: ± 100 x 10
-6
40 mA Max.
16 mA Max.
18 mA Max.
—
—
—
45 % to 55 %
2.4 V Min.
0.4 V Max.
10 TTL Max.
(15 pF Max.)
2.0 V Min.
0.8 V Max.
—
5 ns Max.
—
5 ns Max.
45 % to 55 %
40 % to 60 %
V
DD
-0.5 V Min.
0.5 V Max.
10 TTL Max.
50 pF Max.
2.0 V Min.
0.8 V Max.
5 ns Max.
—
5 ns Max.
—
10 ms Max.
±5 x 10
-6
/year Max.
±10 x 10
-6
Max.
10
µA Max.
40 % to 60 %
—
0.9
x
V
DD
Min.
0.1
x
V
DD
Max.
—
15 pF Max.
0.7 x V
DD
Min.
0.3 x V
DD
Max.
6 ns Max.
6 ns Max.
TTL
C-MOS
Output enable/disable input voltage
Output rise time
C-MOS level
TTL level
C-MOS level
Output fall time
TTL level
Oscillation start up time
Aging
Shock resistance
OE
terminal
(PTK,PHK)
ST
terminal
(ECK)
C-MOS load: 10
%→
90
%
V
DD
TTL load: 0.4 V
→
2.4 V
C-MOS load: 90
%→
10
%
V
DD
TTL load: 2.4 V
→
0.4 V
_
Time at minimum operating voltage to be 0 s
Ta= +25 °C, V
DD
= 5.0 V/3.3 V(ECK)
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s
2
x 0.3 ms x
1/2sine wave in 3 directions
External dimensions
Bottom View
#4
#3
#1
1.4
#2
(Unit: mm)
NO.
Pin terminal
1 OE or ST
2
GND
3
OUT
4
V
DD
Recommended soldering pattern
1.8
(Unit: mm)
2.6
E
40.000
W
HC724A
L
1.5
Max.
L
W
4.2
#1
#2
#4
5.08
#3
PTK/PHK/ECK
7.5 Max. 5.0 Max.
∗∗W
7.2 Max. 5.2 Max.
5.08
5.08
37
2.0
EPSON [ EPSON COMPANY ]
