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PTB 20004
50 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20004 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 50 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
50 Watts, 860–900 MHz
Class AB Characteristics
50% Collector Efficiency at 50 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
60
Output Power (Watts)
50
40
30
20
10
0
0
2
4
6
8
10
200
04
LOT
CO
DE
V
CC
= 25 V
I
CQ
= 200 mA
f = 900 MHz
Input Power (Watts)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
10.0
175
1.0
–40 to +150
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
