e
PTB 20008
10 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
Description
The 20008 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
10 Watts, 935–960 MHz
Class AB Characteristics
50% Collector Efficiency at 10 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
15.0
Output Power (Watts)
12.5
10.0
7.5
5.0
2.5
0.0
0.2
V
CC
= 24 V
I
CQ
= 100 mA
f = 960 MHz
200
08
LOT
COD
E
0.4
0.6
0.8
1.0
1.2
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
6.7
65
0.4
–40 to +150
2.7
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
ERICSSON [ ERICSSON ]
